Abstract

The article presents some issues of explaining the growth processes of epitaxial layers of double and triple semiconductor compounds using gas-phase epitaxy technology. Attention is paid to some features that arise during the growth of superlattice structures (SLS) of various semiconductor materials using organometallic compounds and hydride (OMC – hydride) epitaxy. It was concluded that students need to be able to analyze and control the chemistry of the technological process (the content of OMC and hydrides) in order to obtain monocrystalline lattices with acceptable electrical and optical parameters

Keywords

eptaxy; gas phase; organometallics; superlattice; growth method; installation; gallium; indium; carrier gas; alkyl; reaction; technology; crystallization

References

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